Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: IGBTtransistorDescription: INT-A-PAK48421+$1721.938910+$1706.284925+$1698.457950+$1690.6309100+$1682.8039150+$1674.9769250+$1667.1499500+$1659.3229 -
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Category: IGBTtransistorDescription: INT-A-PAK66931+$3211.609510+$3182.413125+$3167.814850+$3153.2166100+$3138.6184150+$3124.0202250+$3109.4219500+$3094.8237 -
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Category: IGBTtransistorDescription: Trans IGBT Module N-CH 1200V 660A 2660000mW 7Pin Double INT-A-PAK1939 -
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Category: IGBTtransistorDescription: Trans IGBT Module N-CH 1200V 66A 330000mW 11Pin ECONO2 4PAK87461+$1097.297910+$1058.796250+$1053.9835100+$1049.1708150+$1041.4704250+$1034.7327500+$1027.99491000+$1020.2945 -
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Category: IGBTtransistorDescription: Vishay VS-CPV362M4UPBF NChannel IGBT module, common collector, 7.2 A, Vce=600 V, 13 pin IMS-2 package11311+$372.069910+$362.363750+$354.9223100+$352.3340200+$350.3927500+$347.80441000+$346.18672000+$344.5690 -
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Category: IGBTtransistorDescription: Trans IGBT Module N-CH 600V 580A 1136000mW 7Pin Dual INT-A-PAK5178 -
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Category: IGBTtransistorDescription: IGBT Module, Vishay's high-efficiency IGBT module comes with PT, NPT, and Trench IGBT technology options. This series includes single switch, inverter, chopper, half bridge or with custom configuration. These IGBT modules are designed to serve as primary switching devices in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drive, and power factor correction systems. Typical applications include: boost and buck converters, forward and double forward converters, half bridge, full bridge (H-bridge), and three-phase bridge. A wide range of industrial standard packaging types are available for direct installation on heat sinks, including PT, NPT, and Trench IGBT technologies. The low VCE (on) IGBT switching frequency ranges from 1 kHz to 150 kHz, with robust instantaneous performance and high isolation voltage up to 3500 V, 100% lead-free (Pb), and RoHS compliant low thermal resistance. The IGBT module, Vishay insulated gate level bipolar transistor or IGBT, is a three terminal power semiconductor device known for its efficient and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.65391+$1540.918510+$1526.910225+$1519.906050+$1512.9018100+$1505.8976150+$1498.8935250+$1491.8893500+$1484.8851 -
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Category: IGBTtransistorDescription: Igbt 650V 150A Emipak-2B20691+$650.440710+$627.618250+$624.7654100+$621.9126150+$617.3481250+$613.3542500+$609.36021000+$604.7957 -
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Category: IGBTtransistorDescription: Trans IGBT Module N-CH 1200V 200A 658000mW 5Pin INT-A-PAK1699 -
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Category: IGBTtransistorDescription: Trans IGBT Module N-CH 1200V 550A 2841000mW 4Pin Double INT-A-PAK1631 -
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Category: IGBTtransistorDescription: INT-A-PAK66081+$2233.806310+$2213.499025+$2203.345350+$2193.1916100+$2183.0380150+$2172.8843250+$2162.7306500+$2152.5770 -
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Category: IGBTtransistorDescription: IGBT Module, Vishay's high-efficiency IGBT module comes with PT, NPT, and Trench IGBT technology options. This series includes single switch, inverter, chopper, half bridge or with custom configuration. These IGBT modules are designed to serve as primary switching devices in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drive, and power factor correction systems. Typical applications include: boost and buck converters, forward and double forward converters, half bridge, full bridge (H-bridge), and three-phase bridge. A wide range of industrial standard packaging types are available for direct installation on heat sinks, including PT, NPT, and Trench IGBT technologies. The low VCE (on) IGBT switching frequency ranges from 1 kHz to 150 kHz, with robust instantaneous performance and high isolation voltage up to 3500 V, 100% lead-free (Pb), and RoHS compliant low thermal resistance. The IGBT module, Vishay insulated gate level bipolar transistor or IGBT, is a three terminal power semiconductor device known for its efficient and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.83241+$406.575610+$395.969350+$387.8378100+$385.0094200+$382.8882500+$380.05981000+$378.29212000+$376.5244 -
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Category: IGBTtransistorDescription: IGBT Module, Vishay's high-efficiency IGBT module comes with PT, NPT, and Trench IGBT technology options. This series includes single switch, inverter, chopper, half bridge or with custom configuration. These IGBT modules are designed to serve as primary switching devices in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drive, and power factor correction systems. Typical applications include: boost and buck converters, forward and double forward converters, half bridge, full bridge (H-bridge), and three-phase bridge. A wide range of industrial standard packaging types are available for direct installation on heat sinks, including PT, NPT, and Trench IGBT technologies. The low VCE (on) IGBT switching frequency ranges from 1 kHz to 150 kHz, with robust instantaneous performance and high isolation voltage up to 3500 V, 100% lead-free (Pb), and RoHS compliant low thermal resistance. The IGBT module, Vishay insulated gate level bipolar transistor or IGBT, is a three terminal power semiconductor device known for its efficient and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.13231+$415.100610+$404.271850+$395.9698100+$393.0822200+$390.9164500+$388.02881000+$386.22402000+$384.4192 -
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Category: IGBTtransistorDescription: IGBT Module, Vishay's high-efficiency IGBT module comes with PT, NPT, and Trench IGBT technology options. This series includes single switch, inverter, chopper, half bridge or with custom configuration. These IGBT modules are designed to serve as primary switching devices in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drive, and power factor correction systems. Typical applications include: boost and buck converters, forward and double forward converters, half bridge, full bridge (H-bridge), and three-phase bridge. A wide range of industrial standard packaging types are available for direct installation on heat sinks, including PT, NPT, and Trench IGBT technologies. The low VCE (on) IGBT switching frequency ranges from 1 kHz to 150 kHz, with robust instantaneous performance and high isolation voltage up to 3500 V, 100% lead-free (Pb), and RoHS compliant low thermal resistance. The IGBT module, Vishay insulated gate level bipolar transistor or IGBT, is a three terminal power semiconductor device known for its efficient and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.73545+$4.777725+$4.423850+$4.1760100+$4.0699500+$3.99912500+$3.91065000+$3.875210000+$3.8221 -
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Category: IGBTtransistorDescription: Trans IGBT Module N-CH 1200V 20A 240000mW 16Pin MTP92211+$459.059310+$447.083850+$437.9027100+$434.7092200+$432.3141500+$429.12071000+$427.12472000+$425.1288 -
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Category: IGBTtransistorDescription: Trans IGBT Module N-CH 600V 138A 14Pin MTP29271+$675.285810+$651.591650+$648.6298100+$645.6680150+$640.9292250+$636.7827500+$632.63621000+$627.8974 -
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Category: IGBTtransistorDescription: Trans IGBT Module N-CH 1200V 138A 568000mW 12Pin ECO-PAC 289971+$465.160110+$453.025450+$443.7222100+$440.4863200+$438.0594500+$434.82351000+$432.80112000+$430.7787 -
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Category: IGBTtransistorDescription: Trans IGBT Module N-CH 1200V 49A 208000mW 8Pin ECO-PAC 254951+$250.046810+$243.523850+$238.5229100+$236.7834200+$235.4789500+$233.73941000+$232.65222000+$231.5651 -
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Category: IGBTtransistorDescription: Trans IGBT Module N-CH 600V 121A 379000mW 12Pin ECO-PAC 294041+$378.412110+$368.540550+$360.9722100+$358.3398200+$356.3655500+$353.73311000+$352.08782000+$350.4425 -
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Category: IGBTtransistorDescription: Trans IGBT Module N-CH 1200V 49A 208000mW 10Pin ECO-PAC 273471+$275.034010+$267.859250+$262.3585100+$260.4452200+$259.0103500+$257.09701000+$255.90122000+$254.7054 -
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Category: IGBTtransistorDescription: Trans IGBT Module N-CH 600V 93A 294000mW 13Pin ECO-PAC 271631+$366.796010+$357.227450+$349.8914100+$347.3398200+$345.4261500+$342.87451000+$341.27972000+$339.6849 -
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Category: IGBTtransistorDescription: N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)9493 -
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Category: IGBTtransistorDescription: N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)9677 -
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Category: IGBTtransistorDescription: Trans IGBT Module N-CH 1.2kV 300A 4Pin37491+$1216.658310+$1205.597825+$1200.067550+$1194.5372100+$1189.0070150+$1183.4767250+$1177.9464500+$1172.4162 -
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Category: IGBTtransistorDescription: IGBT Discrete, Fuji Electric IGBT discrete components and modules, Fuji Electric insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.71491+$607.485510+$586.170250+$583.5058100+$580.8414150+$576.5783250+$572.8482500+$569.11801000+$564.8549 -
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Category: IGBTtransistorDescription: IGBT Discrete, Fuji Electric IGBT discrete components and modules, Fuji Electric insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.99691+$572.913810+$552.811650+$550.2988100+$547.7860150+$543.7656250+$540.2477500+$536.72981000+$532.7094 -
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Category: IGBTtransistorDescription: IGBT Modules, Infineon * * Infineon package types include 62mm modules, EasyPACK, EconoPACKTM IGBT discrete parts and modules. Infineon insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.92491+$1177.760110+$1167.053225+$1161.699750+$1156.3463100+$1150.9928150+$1145.6394250+$1140.2859500+$1134.9325
